List of semiconductor fabrication plants
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This is a list of semiconductor fabrication plants:
| Company Name | Plant Name | Plant Location | Plant Cost (in billions $) | Production Start Year | Process Wafer (in mm) | Process Node (in nm) | Capacity Wafer/month | Device Manufactured |
|---|---|---|---|---|---|---|---|---|
| Spansion | Fab25 | USA, TX, Austin | 1994 | 200 | Flash | |||
| Intel | D1D[1][2] | USA, OR, Hillsboro | 2003 | 300 | 22 | |||
| Intel | D1C[1][2] | USA, OR, Hillsboro | 2001 | 300 | 32 | |||
| Intel | D1X[3][2] | USA, OR, Hillsboro | 2013 | 300 | 14 | |||
| Intel | Fab 12[1][2] | USA, AZ, Chandler | 1996 | 300 | 65 | |||
| Intel | Fab 32[1][4] | USA, AZ, Chandler | 3 | 2007 | 300 | 45 | ||
| Intel | Fab 32[1][2] | USA, AZ, Chandler | 300 | 32 / 22 | ||||
| Intel | Fab 42[5][6][2] | USA, AZ, Chandler | 5 | 2013 | 300 | 14 | ||
| Intel | Fab 11x[1][2] | USA, NM, Rio Rancho | 2002 | 300 | 32 | |||
| Intel | Fab 11x[1][2] | USA, NM, Rio Rancho | 2002 | 300 | 45 | |||
| Intel | Fab 17[1][2] | USA, MA, Hudson | 1998 | 200 | ||||
| Intel | Fab 10[1] | Ireland, Leixlip | 1994 | 200 | ||||
| Intel | Fab 14[1] | Ireland, Leixlip | 1998 | 200 | ||||
| Intel | Fab 24[1][2] | Ireland, Leixlip | 2006 | 300 | 65 | |||
| Intel | Fab 24[1][2] | Ireland, Leixlip | 2006 | 300 | 90 | |||
| Intel | Fab 28[1][2] | Israel, Kiryat Gat | 2008 | 300 | 45 / 22 | |||
| Intel | Fab 68[1][7] | China, Dalian | 2.5 | 2010 | 300 | 65 | ||
| Motorola | MOTOFAB1[8] | Mexico, Guadalajara | 2002 | |||||
| Micron | Fab 6 | USA, Virginia, Manassas | 300 | |||||
| GlobalFoundries | Fab 1[9] | Germany, Dresden | 2.5 | 2005 | 300 | 45 and under | 80,000 | |
| GlobalFoundries | Fab 7[10] | Singapore | 300 | 130 - 40 | 50,000 | |||
| GlobalFoundries | Fab 8[11] | USA, NY, Malta | 4.6 | 2012 | 300 | 28 | 60,000 | |
| GlobalFoundries | Fab 2[12] | Singapore | 200 | 600 - 350 | 50,000 | |||
| GlobalFoundries | Fab 3/5[13] | Singapore | 200 | 350 - 180 | 54,000 | |||
| GlobalFoundries | Fab 3E[14] | Singapore | 200 | 180 | 34,000 | |||
| GlobalFoundries | Fab 6[15] | Singapore | 200 | 180 - 110 | 45,000 | |||
| GlobalFoundries | Fab 9[16] | UAE, Abu Dhabi | 2015 | |||||
| TSMC | Fab 2[17] | Taiwan, Hsinchu | 150 | |||||
| TSMC | Fab 3 | Taiwan, Hsinchu | 200 | |||||
| TSMC | Fab 5 | Taiwan, Hsinchu | 200 | |||||
| TSMC | Fab 6 | Taiwan, Tainan | 200 | |||||
| TSMC | Fab 8 | Taiwan, Hsinchu | 200 | |||||
| TSMC | Fab 10 | China, Shanghai | 200 | |||||
| TSMC | Fab 12 | Taiwan, Hsinchu | 300 | 28 | ||||
| TSMC | Fab 12 | Taiwan, Hsinchu | 300 | 22 | ||||
| TSMC | Fab 12(P4) | Taiwan, Hsinchu | 300 | |||||
| TSMC | Fab 12(P5) | Taiwan, Hsinchu | 2012 | 300 | ||||
| TSMC | Fab 14 | Taiwan, Tainan | 300 | 28 | ||||
| TSMC WaferTech | Fab 11 | USA, WA, Camas | 200 | |||||
| TSMC | Fab 15[18] | Taiwan, Taichung | 2011Q4 | 300 | 28 | |||
| TSMC | Fab 15[18] | Taiwan, Taichung | 2011Q4 | 300 | 20 | |||
| TSMC | Fab 16 | Taiwan, Taichung | Future | 300 | 28 | |||
| UMC | Fab 6A | Taiwan, Hsinchu | 150 | |||||
| UMC | Fab 8AB | Taiwan, Hsinchu | 200 | |||||
| UMC | Fab 8C | Taiwan, Hsinchu | 200 | |||||
| UMC | Fab 8D | Taiwan, Hsinchu | 200 | |||||
| UMC | Fab 8E | Taiwan, Hsinchu | 200 | |||||
| UMC | Fab 8F | Taiwan, Hsinchu | 200 | |||||
| UMC | Fab 8S | Taiwan, Hsinchu | 200 | |||||
| UMC | Fab 12A | Taiwan, Tainan | 300 | 55,000 | ||||
| UMC | Fab 12i | Singapore | 300 | 45,000 | ||||
| Vanguard International Semiconductor Corporation | Fab 1 | Taiwan, Hsinchu | 200 | |||||
| Vanguard International Semiconductor Corporation | Fab 2 | Taiwan, Hsinchu | 200 | |||||
| IM Flash | IM Flash[19] | Singapore | 2011.04 | 300 | 25 | |||
| IM Flash | IM Flash | USA, UT, Lehi | 300 | 20 | ||||
| IM Flash | IM Flash | USA, VA, Manassas | ||||||
| NXP Semiconductors | DHAM[20] | Germany, Hamburg | ||||||
| NXP Semiconductors | China, Jilin | |||||||
| NXP Semiconductors | UK, Manchester | |||||||
| NXP Semiconductors | ICN8 | Netherlands, Nijmegen | ||||||
| NXP Semiconductors | SSMC | Singapore | ||||||
| Altis Semiconductor | ACL-AMF | France , Corbeil-Essonnes | 1991 | 200 | 350 to 130 | |||
| LFoundry | FAB7 | France , Rousset | 1995 | 200 | ||||
| IBM | Building 323[21][22] | USA, NY, East Fishkill | 2.5 | 2002 | 300 | 22 | ||
| IBM | Burlington Fab | USA, VT, Essex Junction | 200 | |||||
| STMicroelectronics | Crolles 1 / Crolles 200 | France, Crolles | 1993 | 200 | ||||
| STMicroelectronics | Crolles2 | France, Crolles | 2003 | 300 | 90 | |||
| STMicroelectronics | Crolles2 | France, Crolles | 300 | 65 | ||||
| STMicroelectronics | Crolles2 | France, Crolles | 300 | 45 | ||||
| STMicroelectronics | Crolles2 | France, Crolles | 300 | 32 | ||||
| STMicroelectronics | Agrate | Italy, Agrate Brianza | 200 | |||||
| STMicroelectronics | Catania | Italy, Catania | 1997 | 200 | ||||
| STMicroelectronics | Rousset | France, Rousset | 2000 | 200 | ||||
| CNSE | NanoFab 300 North[23] | USA, NY, Albany | .175 | 2005 | 300 | 65 | ||
| CNSE | NanoFab 300 North[23] | USA, NY, Albany | 300 | 45 | ||||
| CNSE | NanoFab 300 North[23] | USA, NY, Albany | 300 | 32 | ||||
| CNSE | NanoFab 300 North[23] | USA, NY, Albany | 300 | 22 | ||||
| CNSE | NanoFab 300 South[23] | USA, NY, Albany | .050 | 2004 | 300 | 22 | ||
| CNSE | NanoFab 200 [24] | USA, NY, Albany | .016 | 1997 | 200 | |||
| CNSE | NanoFab Central [23] | USA, NY, Albany | .150 | 2009 | 300 | 22 | ||
| Powerchip Semiconductor | Memory Foundry[25] | Taiwan, Hsinchu | 300 | 90 | ||||
| Powerchip Semiconductor | Memory Foundry[25] | Taiwan, Hsinchu | 300 | 70 | ||||
| Freescale Semiconductor | ATMC[26] | USA, TX, Austin | 1995 | 200 | 90 | |||
| Freescale Semiconductor | Chandler Fab[27] | USA, AZ, Chandler | 1.1[28] | 1993 | 200 | 180 | ||
| Freescale Semiconductor | Oak Hill Fab[29] | USA, TX, Austin | .8[30] | 1991 | 200 | 250 | ||
| Freescale Semiconductor | Sendai Fab[31] | Japan, Sendai | 1987 | 150 | 500 | |||
| Freescale Semiconductor | Toulouse Fab[32] | France, Toulouse | 1969 | 150 | 650 | |||
| SMIC | S1 Mega Fab[33] | China, Shanghai | 200 | 90 | ||||
| SMIC | S1 Mega Fab[33] | China, Shanghai | 200 | 350 | ||||
| SMIC | S1 Mega Fab[33] | China, Shanghai | 200 | 90 | ||||
| SMIC | S2[33] | China, Shanghai | 300 | 45/40 | ||||
| SMIC | B1 Mega Fab[33] | China, Beijing | 2004 | 300 | 130 | |||
| SMIC | B1 Mega Fab[33] | China, Beijing | 2004 | 300 | 65/55 | |||
| SMIC | Fab 7[33] | China, Tianjin | 2004 | 200 | 350 | |||
| SMIC | Fab 7[33] | China, Tianjin | 200 | 130 | ||||
| Winbond | Memory Product Foundry[34] | Taiwan, Taichung | 300 | 90 | ||||
| Winbond | Memory Product Foundry[34] | Taiwan, Taichung | 300 | 65 | ||||
| MagnaChip | F-5[35] | South Korea, Cheongju | 2005 | 200 | 130 | |||
| ProMOS | Fab 4[36][37] | Taiwan, Taichung | 1.6 | 300 | 70 | |||
| Telefunken Semiconductors | Heilbronn | Germany, Heilbronn | 150 | 10,000 | ||||
| Telefunken Semiconductors | Roseville fab[38] | USA, CA, Roseville | 200 | |||||
| Hynix | M7[39] | South Korea, Icheon | 200 | |||||
| Hynix | M8[39] | South Korea, Cheongju | 200 | |||||
| Hynix | M9[39] | South Korea, Cheongju | 200 | |||||
| Hynix | E1[39] | CLOSED 2008 USA, OR, Eugene | 200 | |||||
| Hynix | HC1[39] | China, Wuxi | 200 | |||||
| Fujitsu | Fab No. 1[40] | Japan, Mie Prefecture | 2005 | 300 | 65 | 15,000 | ||
| Fujitsu | Fab No. 1[40] | Japan, Mie Prefecture | 2005 | 300 | 90 | 15,000 | ||
| Fujitsu | Fab No. 2[40] | Japan, Mie Prefecture | 2007 | 300 | 65 | 25,000 | ||
| Fujitsu | Fab No. 2[40] | Japan, Mie Prefecture | 2007 | 300 | 90 | 25,000 | ||
| Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 65 | |||||
| Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 90 | |||||
| Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 130 | |||||
| Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 180 | |||||
| Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 250 | |||||
| Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 1991 | 350 | ||||
| ON Semiconductor | Gresham[41] | USA, OR, Gresham | 200 | 130 | ||||
| ON Semiconductor | Pocatello[42] | USA, ID, Pocatello | 200 | 350 | ||||
| ON Semiconductor | Pocatello[42] | USA, ID, Pocatello | 200 | 5000 | ||||
| National Semiconductor | Greenock[43] | Scotland, Greenock | 150 | 20,833 | ||||
| National Semiconductor | South Portland[44] | USA, ME, South Portland | .932 | 1997 | 350 | |||
| National Semiconductor | South Portland[44] | USA, ME, South Portland | 250 | |||||
| National Semiconductor | South Portland[44] | USA, ME, South Portland | 180 | |||||
| National Semiconductor | West Jordan | USA, UT, West Jordan | 1977 | 102 | ||||
| National Semiconductor | Arlington | USA, TX, Arlington | 1985 | 152 | ||||
| Samsung | Line-16[45] | South Korea, Hwaseong | 10.2 | 2011 | 300 | 20 | ||
| Samsung | S2[46] | USA, TX, Austin | 2011 | 300 | 32 | 40,000 | ||
| TowerJazz Semiconductor | Fab 1[47] | Israel, Migdal Haemek | 1989 | |||||
| TowerJazz Semiconductor | Fab 2[47] | Israel, Migdal Haemek | 2003 | |||||
| TowerJazz Semiconductor | Fab 3[47] | USA, CA, Newport Beach | 1967 | 500-130 | ||||
| TowerJazz Semiconductor | Fab 4[47] | Japan, Nishiwaki City | ||||||
| Texas Instruments | FFAB | Germany, Freising | 200 | |||||
| Texas Instruments | MFAB | USA, Main | 200 | |||||
| Texas Instruments | RFAB | USA, TX, Richardson | 300 | |||||
| Texas Instruments | DMOS6 | USA, TX, Dallas | 300 | |||||
| Texas Instruments | DMOS5 | USA, TX, Dallas | 200 | |||||
| Texas Instruments | MIHO8 | Japan, Miho | 200 | |||||
| Texas Instruments | Aizu | Japan, Aizu | 200 | |||||
| Texas Instruments | Chengdu | China, Chengdu | 200 | |||||
| Infineon Technologies | Villach | Austria, Villach | 1970[48] | 150,200,300 | ||||
| Infineon Technologies | Dresden | Germany, Dresden | 1994, refurnished 2011 [49] | 200,300 | 90 | |||
| Infineon Technologies | Kulim [50] | Malaysia, Kulim | 2006[51] | 200,300 | ||||
| Infineon Technologies | Kulim 2 | Malaysia, Kulim | future | |||||
| Infineon Technologies | Regensburg [52] | Germany, Regensburg | 1959 | |||||
| Bosch | Germany, Reutlingen | 1995 [53] | 150 | ASIC, analog, power | ||||
| Bosch | WaferFab | Germany, Reutlingen | 2010 [53] | 200 | 30,000 | ASIC, analog, power, MEMS |
References
- ^ a b c d e f g h i j k l m n Moore's Law Around the World, in Bricks and Mortar, Oct 21, 2010
- ^ a b c d e f g h i j k l Intel Global Manufacturing Facts, 2011
- ^ [1]
- ^ Intels $3 Billion Fab Now Open for Business
- ^ Intel to Invest More than $5 Billion to Build New Factory in Arizona
- ^ "Intel's new $5 billion plant in Arizona has Obama's blessing". http://www.usatoday.com. Retrieved 03/28/201.
- ^ Intel Opens $2.5 Billion Fab Plant in China
- ^ Motorola Plant Reference in a book
- ^ [2]
- ^ [3]
- ^ [4]
- ^ [5]
- ^ [6]
- ^ [7]
- ^ [8]
- ^ Cooper, Robin K. (2011-05-24). "GlobalFoundries to build Abu Dhabi plant in 2012".
- ^ "Fab Locations". Taiwan Semiconductor Manufacturing Company Limited. Retrieved 21 April 2012.
- ^ a b "TSMC Acquires PSC Land for New Fab Construction". Taiwan Economic News. 2011-01-13. Retrieved 2011-01-13.
- ^ "Intel, Micron open US$3 billion NAND flash facility in Singapore". DigiTimes. 2011-04-11. Retrieved 2011-04-11.
- ^ About NXP
- ^ "IBM's Cutting-Edge $2.5 Billion Fab Reaps $500 Million in NY Incentives". The Site Selection. 2000-11-01. Retrieved 2011-04-16.
- ^ "IBM's $2.5B fab turns Hudson into silicon valley". EE Times. 2002-08-05. Retrieved 2011-05-27.
- ^ a b c d e f 300mm Wafer Fabrication
- ^ 200mm Wafer Fabrication
- ^ a b Foundry Services
- ^ Freescale Austin Technology & Manufacturing Center
- ^ Freescale Chandler Fab
- ^ "Motorola Restarts MOS 12 Facility Expansion". Electronic News. 1999. Retrieved 2011-10-06.
- ^ Freescale Oak Hill Fab
- ^ "R & D Collaboration on Trial: The Microelectronics and Computer Technology Corporation". Harvard Business School Press. 1994. Retrieved 2011-10-06.
- ^ Freescale Sendai Fab
- ^ Freescale Toulouse Fab
- ^ a b c d e f g h [9]
- ^ a b Memory Product Foundry
- ^ MagnaChip ups capex, tips 130-nm process
- ^ "ProMOS Goes for 70nm DRAM". SOFTPEDIA. 2007-08-13. Retrieved 2011-05-27.
- ^ "Record fab construction reached in second quarter, says report". EE Times. 2004-07-02. Retrieved 2011-05-31.
- ^ "Renesas sells U.S. fab to Telefunken". EE Times. 2011-03-30. Retrieved 2011-05-31.
- ^ a b c d e Hynix to Accelerate Retirement of 200mm Fabrication Plants
- ^ a b c d Fujitsu to Construct New Fab for Logic Chips Employing 65nm Process Technology and 300mm Wafers
- ^ Gresham, USA
- ^ a b Pocatello, USA
- ^ Greenock, Scotland
- ^ a b c South Portland, Maine
- ^ "SAMSUNG BEGINS OPERATION OF WORLD’S LARGEST MEMORY FAB". Samsung Village. 2011-09-22. Retrieved 2011-10-06.
- ^ "Samsung's Austin Logic Line Breaks Record Achievements". Samsung. 2011-12-05. Retrieved 2012-05-18.
- ^ a b c d TowerJazz Manufacturing
- ^ http://www.infineon.com/export/sites/default/media/regions/at/brochures/Infineon_Technologies_Austria_AG_Imagebroschuere_English.pdf
- ^ www.infineon.com/dgdl/IFD+_Broschuere2012.pdf?folderId=db3a3043134f57b0011352cc4bc20107&fileId=db3a304314dca3890115046d8cd00c33
- ^ http://www.infineon.com/cms/en/corporate/career/our-sites/country/malaysia/kulim/index.html
- ^ http://www.eetimes.com/electronics-news/4064841/Infineon-launches-Kulim-fab
- ^ http://www.infineon.com/dgdl/Rbg_d.pdf?folderId=db3a304412b91b910112baab5ed71fb4&fileId=db3a304412b91b910112baad8075224a
- ^ a b http://www.bosch-career.de/de/technikvision/download/Factsheet_WaferFab%20Reutlingen.pdf
External links
- The IC Foundry Almanac. 2009 edition. Section III: IC Foundry providers // IC Insights, Global Semiconductor Alliance, 2009
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